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Updated: Jul 6, 2026

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films
Published on: August 19, 2016
Preparation and characterization of new glassy system As2P2S8-Ga2S3
Silvia H Santagneli1, José Schneider, Igor Skripachev
1Institute of Chemistry,- Universidade Estadual Paulista Júlio de Mesquita Filho, Post Office Box 355, Araraquara, SP 14801-970, Brazil.
Abstract:
Glasses having the composition (100 - x)As2P2S8-xGa2S3 with x ranging from 0 to 50% were investigated to determine the compositional effect on properties and local structure. The glass transition temperature (Tg) and the stability parameter against crystallization (Tx - Tg) increased with the addition of Ga2S3. The structure of these glasses was probed by Raman scattering, Fourier transform infrared (FT-IR) and 31P nuclear magnetic resonance. On the basis of the observed vibrations and the strength of the 31P-31P homonuclear magnetic dipolar coupling, two scenarios can be proposed for the structural evolution induced by the addition of Ga2S3. For x

