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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Dual chopped photoreflectance spectroscopy for nondestructive characterization of semiconductors and semiconductor
Takashi Kita1, Masahiro Yamada, Osamu Wada
1Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, Rokkodai 1-1, Nada, Kobe 657-8501, Japan. kita@eedept.kobe-u.ac.jp
Abstract:
Photoreflectance (PR) spectroscopy unaffected by photoluminescence and light scattering has been developed for performing precise characterization of the electronic band structure of semiconductors and semiconductor nanostructures. Dual chopping of both the pump and probe lights eliminates the unexpected components included in the signal when detecting the sum frequency or difference frequency component by using a lock-in detection system. The obtained PR signal contains no background and is considered to be an ideal electromodulated reflectance.
