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Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
Published on: October 6, 2020
Preparation of MgF2-SiO2 thin films with a low refractive index by a solgel process
Hitoshi Ishizawa1, Shunsuke Niisaka, Tsuyoshi Murata
1Materials and Advanced Research Laboratory, Nikon Corporation, 1-10-1 Asamizodai, Sagamihara, Kanagawa 228-0828, Japan. Ishizawa.Hitoshi@nikonoa.net
Abstract:
Porous MgF(2)-SiO(2) thin films consisting of MgF(2) particles connected by an amorphous SiO(2) binder are prepared by a solgel process. The films have a low refractive index of 1.26, sufficient strength to withstand wiping by a cloth, and a high environmental resistance. The refractive index of the film can be controlled by changing the processing conditions. Films can be uniformly formed on curved substrates and at relatively low temperatures, such as 100 degrees C. The low refractive index of the film, which cannot be achieved by conventional dry processes, is effective in improving the performance of antireflective coatings.

