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Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films
Tero Pilvi1, Mikko Ritala, Markku Leskelä
1Department of Chemistry, P.O. Box 55, University of Helsinki, FI-00014 Helsinki, Finland. Tero.Pilvi@helsinki.fi
Abstract:
A novel atomic layer deposition process for the preparation of fluoride thin films in a temperature range of 225 degrees C-400 degrees C is introduced. The crystallinity, morphology, composition, thicknesses, refractive indices, and transmittance of the films are analyzed. Low impurity levels are obtained at 350 degrees C-400 degrees C with good stoichiometry. Refractive indices of 1.34-1.42 for MgF(2), 1.43 for CaF(2), and 1.57-1.61 for LaF(3) films are obtained.
