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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

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Related Experiment Video

Updated: Jul 5, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

SiGe nanowire field effect transistors.

Cheng Qi1, Yaswanth Rangineni, Gary Goncher

  • 1Department of Electrical and Computer Engineering, Portland State University, Portland, OR 97201, USA.

Journal of Nanoscience and Nanotechnology
|May 13, 2008
PubMed
Summary
This summary is machine-generated.

Silicon-germanium nanowires were used to create p-type field-effect transistors (p-FETs). Fabrication methods influenced performance, with electron beam lithography yielding higher hole mobilities than focused ion beam methods.

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10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Silicon-germanium (SiGe) alloys are promising materials for advanced semiconductor devices.
  • Nanowires offer unique electrical properties due to their high surface-to-volume ratio.
  • Field-effect transistors (FETs) are fundamental components in modern electronics.

Purpose of the Study:

  • To fabricate and characterize p-type field-effect transistors (p-FETs) using Si0.5Ge0.5 nanowires.
  • To investigate the impact of fabrication techniques on device performance.
  • To evaluate the electrical properties, specifically hole mobility, of the fabricated p-FETs.

Main Methods:

  • Fabrication of Si0.5Ge0.5 nanowire p-FETs using focused ion beam (FIB) and electron beam lithography (EBL).
  • Integration of boron doping, high-k HfO2 insulator, and various electrode materials (Pt, Ti/Au).
  • Electrical analysis to determine field-effect transistor characteristics and measure effective hole mobilities.

Main Results:

  • Both FIB and EBL methods successfully produced functional SiGe p-FETs exhibiting field-effect transistor characteristics.
  • FIB-fabricated devices with Pt electrodes achieved effective hole mobilities of approximately 50 cm2V(-1)s(-1).
  • EBL-fabricated devices with Ti/Au electrodes demonstrated significantly higher effective hole mobilities, around 350 cm2V(-1)s(-1).

Conclusions:

  • Si0.5Ge0.5 nanowires are viable channel materials for p-FET applications.
  • The choice of fabrication method and electrode material critically impacts device performance, particularly hole mobility.
  • EBL offers a pathway to achieving higher performance SiGe nanowire p-FETs compared to FIB.