Related Experiment Video
Updated: Jul 5, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Magnetic field control of exchange and noise immunity in double quantum dots
1Center for Nanoscale Systems, and Department of Physics, Harvard University, Cambridge, MA 02138, USA. stopa@cns.fas.harvard.edu
Abstract:
We employ density functional calculated eigenstates as a basis for exact diagonalization studies of semiconductor double quantum dots, with two electrons, through the transition from the symmetric bias regime to the regime where both electrons occupy the same dot. We calculate the singlet-triplet splitting J(epsilon) as a function of bias detuning epsilon and explain its functional shape with a simple, double anticrossing model. A voltage noise suppression "sweet spot," where d J(epsilon)/d(epsilon) = 0 with nonzero J(epsilon), is predicted and shown to be tunable with a magnetic field B.
Related Concept Videos
Double Resonance Techniques: Overview
Spin decoupling is usually achieved by...
Diamagnetic Shielding of Nuclei: Local Diamagnetic Current
Atomic Nuclei: Nuclear Relaxation Processes
Magnetic Field due to Moving Charges
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Magnetic Field Due to Two Straight Wires

