Cathodoluminescence study of semiconductor oxide micro- and nanostructures grown by vapor deposition

Nano- and microstructures of SnO(2), In(2)O(3) and ZnO have been grown during thermal treatment of compacted powders under argon flow. Indium-doped SnO(2) tube-shaped structures with rectangular cross-section are obtained by adding a fraction of In(2)O(3) to the starting SnO(2) powder. In-rich nanoislands were found to grow on some edges of the tubes. ZnO nanostructures doped with Sn or Eu were grown by adding SnO(2) and Eu(2)O(3) powder, respectively, to the ZnO precursor powder. All the samples have been characterized by the emissive and cathodoluminescence (CL) modes of scanning electron microscopy. CL images from SnO(2):In and In(2)O(3):Sn tubes and islands show a higher emission from the Sn-rich structures related to oxygen deficiency. CL of doped ZnO enables to detect the presence of dopant in specific regions or structures. CL appears to be a useful technique to study optical and electronic properties of semiconductor oxide nanostructures.