Related Experiment Video
Updated: Jul 4, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Apparent volume dependence of 1/f noise in thin film structures: role of contacts
1CNR-INFM Coherentia and Dipartimento di Matematica e Informatica, Università di Salerno, Baronissi, Salerno I 84081, Italy. barone@sa.infn.it
Abstract:
The experimental investigation of low-frequency noise properties in new materials is very useful for the understanding of the involved physical transport mechanisms. In this paper it is shown that, when contact noise is present, the experimental values of the normalized Hooge parameter show a fictitious linear dependence on the volume of the analyzed samples. Experimental data on noise measurements of La0.7Sr0.3MnO3 thin films are reported to demonstrate the validity of the analysis performed.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Debye–Huckel–Onsager Conductance Equation
Boundary Conditions for Current Density
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
