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Updated: Jul 4, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Diode-pumped Nd:YVO(4)/Yb:S-FAP laser emitting at 985 and 492.5 nm
Marc Castaing1, François Balembois, Patrick Georges
1Laboratoire Charles Fabry de l'Institut d'Optique, CNRS, Université Paris-Sud, Campus Polytechnique, RD128, Palaiseau, France. marc.castaing@institutoptique.fr
Abstract:
For the first time, to the best of our knowledge, Yb:S-FAP crystals have been intracavity pumped by a Nd:YVO(4) laser at 914 nm. This original pumping scheme allows efficient laser action on the three-level transition at 985 nm with 1.4 W output power. Second-harmonic generation is also presented with a total output power of 120 mW at 492.5 nm.
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