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Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated
1Opto System Laboratory, Samsung Electro-Mechanics Co, Suwon, Korea. hstheory@gmail.com
Abstract:
We report on the fabrication of high-efficiency vertical-injection GaN-based light-emitting diodes (LEDs) fabricated with integrated surface textures. An optical ray-tracing simulation shows that the high integration of surface textures can effectively enhance the light-extraction efficiency. The integrated surface textures are fabricated on the top surface of LEDs by generating hexagonal cones on the periodically corrugated surfaces of n-GaN. Compared to reference LEDs without textures, LEDs fabricated with integrated surface textures show an enhancement of the output power by a factor of 2.59, which is in agreement with the calculated results.
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