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Orientational Transition in a Liquid Crystal Triggered by the Thermodynamic Growth of Interfacial Wetting Sheets
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Tailoring the ultrathin Al-induced crystallization temperature of amorphous si by application of interface

Z M Wang1, J Y Wang, L P H Jeurgens

  • 1Max Planck Institute for Metals Research, Heisenbergstrasse 3, D-70569 Stuttgart, Germany.

Physical Review Letters
|June 4, 2008
PubMed

Keywords:
thin film crystallizationamorphous silicon propertiessurface thermodynamicssemiconductor fabrication

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