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Related Experiment Video

Updated: Jul 4, 2026

Measurements of Long-range Electronic Correlations During Femtosecond Diffraction Experiments Performed on Nanocrystals of Buckminsterfullerene
08:44

Measurements of Long-range Electronic Correlations During Femtosecond Diffraction Experiments Performed on Nanocrystals of Buckminsterfullerene

Published on: August 22, 2017

Electronically driven structure changes of Si captured by femtosecond electron diffraction.

Maher Harb1, Ralph Ernstorfer, Christoph T Hebeisen

  • 1Institute for Optical Sciences and Departments of Physics and Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario, Canada.

Physical Review Letters
|June 4, 2008
PubMed
Summary

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Angewandte Chemie (International ed. in English)·2026

High-density carrier excitation in semiconductors triggers a rapid order-to-disorder phase transition. This electronically driven transformation in silicon occurs within 500 femtoseconds, revealing crucial structural dynamics.

Area of Science:

  • Solid-state physics
  • Materials science
  • Ultrafast phenomena

Background:

  • Carrier excitation in semiconductors can alter lattice potential energy, leading to phase transitions.
  • Understanding these transitions is key to developing advanced semiconductor devices.

Purpose of the Study:

  • To directly resolve the structural dynamics of carrier-induced order-to-disorder phase transitions in silicon.
  • To investigate the time scale and mechanism of this transition.

Main Methods:

  • Utilizing 200-femtosecond (fs) electron pulses for high-resolution structural analysis.
  • Studying freestanding films of both polycrystalline and (001)-oriented crystalline silicon.

Main Results:

  • At excitation levels exceeding 6% of valence electron density, crystalline silicon loses its structure in under 500 fs.

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Published on: August 22, 2017

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  • The observed transition time scale strongly suggests an electronically driven mechanism.
  • The relaxation process is characterized by multiple scattering events, not simple inertial motion.

    • Conclusions:

    • Directly observed ultrafast, electronically driven order-to-disorder phase transition in silicon.
    • The findings provide critical insights into the fundamental physics of carrier-lattice interactions in semiconductors.
    • This research paves the way for novel applications in ultrafast electronics and materials science.