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Updated: Jul 4, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
L Dicarlo1, J R Williams, Yiming Zhang
1Department of Physics, Harvard University, Cambridge, MA 02138, USA.
We measured current noise in graphene devices, finding a consistent Fano factor in single-layer samples and a decreasing factor in multilayer ones. These findings offer insights into electron transport phenomena in graphene.
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