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Updated: Jul 4, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Shot noise in graphene.

L Dicarlo1, J R Williams, Yiming Zhang

  • 1Department of Physics, Harvard University, Cambridge, MA 02138, USA.

Physical Review Letters
|June 4, 2008
PubMed
Summary
This summary is machine-generated.

We measured current noise in graphene devices, finding a consistent Fano factor in single-layer samples and a decreasing factor in multilayer ones. These findings offer insights into electron transport phenomena in graphene.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Current noise measurements provide crucial insights into electron transport mechanisms in materials.
  • Graphene, a unique 2D material, exhibits distinct electronic properties that warrant detailed investigation of its noise characteristics.

Purpose of the Study:

  • To experimentally determine the current noise properties, specifically the Fano factor, in both single-layer and multilayer graphene devices.
  • To compare the experimental findings with theoretical models describing shot noise in ballistic and disordered graphene systems.

Main Methods:

  • Fabrication and characterization of single-layer and multilayer graphene devices, including a p-n junction configuration.
  • Precise measurement of current noise spectra across varying carrier types and densities in the graphene samples.

Main Results:

  • In single-layer graphene, the Fano factor remained stable (+/-10%) across different carrier conditions, averaging between 0.35 and 0.38.
  • A multilayer graphene device showed a decreasing Fano factor, from 0.33 at the charge-neutrality point to 0.25 at high carrier densities.
  • Experimental data were systematically compared against established theories for shot noise in both ballistic and disordered graphene.

Conclusions:

  • The observed Fano factor behavior in single-layer and multilayer graphene provides valuable experimental data for understanding charge transport.
  • The results suggest that theoretical frameworks for shot noise in graphene need to account for specific device architectures and carrier dynamics.