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Updated: Jul 4, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Quantitative determination of electric field strengths within dynamically operated devices using EBIC analysis in the
Anton Pugatschow1, Ralf Heiderhoff, Ludwig J Balk
1Lehrstuhl für Elektronik, Bergische Universität Wuppertal, Wuppertal, Germany.
Abstract:
Although electron beam-induced current (EBIC) technique was invented in the seventies, it is still a powerful technique for failure analysis and reliability investigations of modern materials and devices. Time-resolved and stroboscopic microanalyses using sampling Fourier components decomposed by modulated charge carrier excitation are introduced. Quantitative determination of electric field strengths within dynamically operated devices in the scanning electron microscope (SEM) will be demonstrated. This technique allows investigations of diffusion and drift processes and of variations of electric field distributions inside active devices.
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