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Updated: Jul 4, 2026
Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Electrical and optical transport of GaAs/carbon nanotube heterojunctions
1Max-Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany. cw.liang@fkf.mpg.de
Abstract:
Heterojunctions consisting of nanotubes and an industrialized semiconductor-GaAs have been produced, and their transport properties were studied. We found that the p-doped GaAs forms an ohmic contact with a nanotube but the n-doped GaAs/nanotube heterojunction is rectifying. Analysis of measurement results at various temperatures shows that tunneling transport plays an important role. We also observed photovoltaic effects in n-GaAs/nanotube junction with the illumination of a green laser or desk lamp.
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