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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

Interface and wetting layer effect on the catalyst-free nucleation and growth of GaN nanowires

Toma Stoica1, Eli Sutter, Ralph J Meijers

  • 1Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information Technology Research Centre, Jülich GmbH, 52425 Jülich, Germany.

Small (Weinheim an Der Bergstrasse, Germany)
|June 7, 2008
PubMed
Abstract

No abstract available in PubMed .

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