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Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

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High-efficiency photonic crystal microlaser integrated with a passive waveguide.

Hideki Watanabe¹, Toshihiko Baba

¹Yokohama National University, Department of Electrical and Computer Engineering, 79-5 Tokiwadai, Hodogayaku, Yokohama 240-8501, Japan.

|June 11, 2008

Summary

Researchers developed a Gallium Indium Arsenide Phosphide (GaInAsP) photonic crystal slab microlaser. This device integrates a passive waveguide, achieving 0.17 mW maximum output power and 20% differential quantum efficiency.

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Area of Science:

Photonics
Semiconductor Lasers
Materials Science

Background:

Photonic crystal slab microlasers offer miniaturization and unique optical properties.
Integration of active and passive regions is crucial for device performance.
Gallium Indium Arsenide Phosphide (GaInAsP) is a key material for optoelectronic devices.

Purpose of the Study:

To fabricate a GaInAsP photonic crystal slab microlaser with an integrated passive waveguide.
To optimize the interface between active and passive regions for enhanced light transmission.
To improve waveguide output and light detection efficiency.

Main Methods:

Metalorganic Chemical Vapor Deposition (MOCVD) butt-joint regrowth process was employed.
Optimization of the boundary between active and passive regions.

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Design of waveguide edge for narrow beam output and improved light detection.

Main Results:

A GaInAsP photonic crystal slab microlaser with an integrated passive waveguide was successfully fabricated.
Maximum output power of 0.17 mW was achieved.
Differential quantum efficiency reached 20%, with potential to exceed 40% under ideal conditions.

Conclusions:

The MOCVD butt-joint regrowth process enables efficient integration of active and passive regions in photonic crystal slab microlasers.
Optimized design leads to improved output power and quantum efficiency.
This work demonstrates a promising approach for advanced optoelectronic device development.