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Electro-optically induced absorption in alpha-Si:H/alpha-SiCN waveguiding multistacks.

Francesco G Della Corte¹, Sandro Rao, Maria A Nigro

¹Department of Information Science, Mathematics, Electronics and Transportations, Mediterranea University, Reggio Calabria, Italy.

|June 12, 2008

Summary

This summary is machine-generated.

Electro-optical absorption in silicon carbonitride multilayers was studied using plasma enhanced chemical vapor deposition. Electric fields induced light absorption in these waveguides, validated by 2-D simulations.

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Area of Science:

Materials Science
Optoelectronics
Semiconductor Physics

Background:

Hydrogenated amorphous silicon (a-Si:H) and amorphous silicon carbonitride (a-SiCxNy) are key materials in optoelectronic devices.
Planar multilayer waveguides are crucial for integrated optical circuits.
Controlling light absorption via electric fields is essential for modulator applications.

Purpose of the Study:

To investigate electro-optical absorption in a-SiCxNy multilayers.
To evaluate the performance of PECVD-fabricated waveguides.
To compare experimental results with 2-D optical and electrical simulations.

Main Methods:

Fabrication of planar multistack waveguides using plasma enhanced chemical vapor deposition (PECVD).
Induction of light absorption at lambda = 1.55 microm using an applied electric field.
Free carrier accumulation analysis across insulator/semiconductor structures.
Combined two-dimensional (2-D) optical and electrical simulations for performance comparison.

Main Results:

Demonstrated electro-optical absorption in a-SiCxNy multilayer waveguides.
Confirmed the compatibility of PECVD with microelectronic processes for waveguide fabrication.
Validated experimental findings through comprehensive 2-D simulations.
Quantified light absorption modulation via electric field application.

Conclusions:

a-SiCxNy multilayers are suitable for electro-optical absorption applications in waveguides.
PECVD is a viable technique for fabricating such optoelectronic devices.
Numerical simulations accurately predict the device performance, aiding future design optimization.