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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Full wave rectifier

Full wave rectifier

A full-wave rectifier is a device that converts alternating current (AC) to direct current (DC) and is more efficient than its half-wave counterpart. It typically includes a center-tapped transformer, two diodes, and a load resistor. The secondary winding of the transformer is divided to provide two equal voltages of opposite polarities, which is the pivotal element of full-wave rectification.

Half wave rectifier

Half wave rectifier

A half-wave rectifier is a fundamental circuit in electronics, designed to convert alternating current (AC) voltage into a unidirectional voltage. It utilizes the simplest form of diode rectification, where the circuit comprises a single diode in series with a load resistor and an AC power source.

Diode: Reverse bias

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...

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Related Experiment Video

Updated: Jul 4, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Current rectification in a single silicon nanowire p-n junction.

Yaswanth Rangineni¹, Cheng Qil, Gary Goncher

¹Department of Electrical and Computer Engineering, Portland State University, Portland, OR 97201, USA.

Journal of Nanoscience and Nanotechnology

|June 25, 2008

Summary

Researchers created silicon nanowire diodes by doping during growth. Current-voltage measurements confirmed diode characteristics, with tunneling identified as the reverse bias leakage mechanism.

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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Published on: June 3, 2015

Area of Science:

Materials Science
Nanotechnology
Semiconductor Physics

Background:

Silicon nanowires offer unique electronic properties due to their high surface-to-volume ratio.
Fabricating functional electronic devices at the nanoscale is crucial for next-generation electronics.
Doping control during nanowire growth is essential for creating p-n junctions.

Purpose of the Study:

To fabricate and characterize diodes from individual silicon nanowires.
To investigate the electrical properties and current transport mechanisms in these nanowire diodes.

Main Methods:

Silicon nanowires were doped during growth to form p-n junctions.
Electron beam lithography was used for precise electrical contacting of the nanowire ends.
Current-voltage (I-V) measurements were performed to analyze diode behavior.

Main Results:

Fabricated diodes exhibited characteristic diode behavior.
A threshold voltage (Vt) of approximately 1 V and an ideality factor (n) of about 3.6 were observed in the quasi-neutral region.
Reverse bias measurements revealed exponential current behavior, indicative of tunneling.

Conclusions:

Individual silicon nanowires can be successfully fabricated into functional diodes.
Tunneling is the primary mechanism for current leakage under reverse bias conditions.
These results demonstrate the potential of silicon nanowires for nanoscale electronic device applications.