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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
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High speed hybrid silicon evanescent electroabsorption modulator.

Ying-Hao Kuo1, Hui-Wen Chen, John E Bowers

  • 1Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA. yinghao.kuo@ece.ucsb.edu

Optics Express
|June 26, 2008
PubMed
Summary

Researchers demonstrate a novel high-speed modulator using silicon waveguides. This hybrid silicon device achieves a 10 GHz modulation bandwidth and operates at 10 Gb/s with low drive voltage.

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Area of Science:

  • Photonics
  • Materials Science
  • Electrical Engineering

Background:

  • Silicon photonics is crucial for high-speed optical communication.
  • Electroabsorption modulators (EAMs) are key components in optical systems.
  • Developing modulators with high speed and low power consumption remains a challenge.

Purpose of the Study:

  • To demonstrate a new hybrid silicon evanescent electroabsorption modulator.
  • To achieve high-speed modulation using silicon (Si) waveguides.
  • To characterize the performance of the novel modulator design.

Main Methods:

  • Fabrication of a hybrid silicon evanescent electroabsorption modulator.
  • Integration of offset AlGaInAs quantum wells within Si waveguides.
  • Testing of modulator performance including extinction ratio, modulation bandwidth, and eye diagram.

Main Results:

  • Achieved an extinction ratio over 10 dB.
  • Demonstrated a modulation bandwidth of 10 GHz.
  • Observed a clean open eye at 10 Gb/s data rates with sub-volt drive voltage.

Conclusions:

  • The demonstrated hybrid silicon modulator offers a promising solution for high-speed optical communication.
  • The device exhibits excellent performance metrics suitable for advanced photonic integrated circuits.
  • This approach advances the capabilities of silicon photonics for next-generation data transmission.