High speed hybrid silicon evanescent electroabsorption modulator
Related Experiment Video
Updated: Jul 4, 2026

09:36
Characterization of Anisotropic Leaky Mode Modulators for Holovideo
Published on: March 19, 2016
Ying-Hao Kuo1, Hui-Wen Chen, John E Bowers
1Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA. yinghao.kuo@ece.ucsb.edu
Optics Express
|June 26, 2008
Abstract:
A new way to make high speed modulators using Si waveguides is demonstrated. The hybrid silicon evanescent electroabsorption modulator with offset AlGaInAs quantum wells has an extinction ratio over 10 dB and modulation bandwidth of 10 GHz. The modulator has a clean open eye at 10 Gb/s with sub-volt drive.
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