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Published on: June 18, 2013
Light-controlled organic/inorganic P-N junction nanowires
Yanbing Guo1, Qingxin Tang, Huibiao Liu
1Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China.
Journal of the American Chemical Society
|July 1, 2008
Summary
Researchers fabricated organic/inorganic P-N junction nanowires. These hybrid nanowires demonstrate light-controlled diode performance, enabling new photoelectric integration possibilities in single-nanowire devices.
Area of Science:
- Materials Science
- Nanoscience
- Organic Electronics
Background:
- P-N junctions are fundamental to semiconductor devices and modern electronics.
- Organic/inorganic hybrid nanowires offer potential for novel chemical and physical properties.
- Individual components and bulk materials do not exhibit the unique characteristics of nanosized hybrids.
Purpose of the Study:
- To fabricate organic/inorganic semiconductor P-N junction nanowires.
- To investigate the performance of these hybrid nanowires as light-controlled diodes.
- To explore new methods for photoelectric integration within single nanowire devices.
Main Methods:
- Fabrication of hybrid organic/inorganic semiconductor P-N junction nanowires.
- Characterization of the light-controlled diode performance within individual nanowires.
- Demonstration of conductivity control via light irradiation.
Main Results:
- Successful fabrication of organic/inorganic P-N junction nanowires.
- Remarkable light-controlled diode performance observed in single hybrid nanowires.
- Demonstrated ability to control P-N junction nanowire conductivity using light irradiation.
Conclusions:
- Organic/inorganic P-N junction nanowires exhibit unique properties not seen in bulk materials.
- Light-controlled diode functionality is achievable within a single hybrid nanowire.
- This work presents a novel approach for photoelectric integration in nanowire devices.
Related Concept Videos
01:11P-N junction
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
01:16Biasing of P-N Junction
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...