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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Facet-to-facet Linking of Shape-anisotropic Colloidal Cadmium Chalcogenide Nanostructures
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Coalescence and interface diffusion in linear CdTe/CdSe/CdTe heterojunction nanorods.

Bonil Koo1, Brian A Korgel

  • 1Department of Chemical Engineering, Center for Nano- and Molecular Science and Technology, The University of Texas at Austin, Austin, Texas 78712-1062, USA.

Nano Letters
|July 12, 2008
PubMed
Summary

Colloidal nanorods with cadmium telluride/cadmium selenide (CdTe/CdSe) heterojunctions were synthesized. Se-Te interdiffusion and nanorod coalescence were measured, with a viscous flow model providing reasonable predictions.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemical Engineering

Background:

  • Colloidal nanorods are crucial in nanomaterials.
  • Controlled synthesis of heterojunction nanorods is challenging.
  • Understanding interdiffusion and coalescence is key for material properties.

Purpose of the Study:

  • To synthesize colloidal nanorods with linear CdTe/CdSe/CdTe heterojunctions.
  • To investigate the Se-Te interdiffusion rates across heterojunctions.
  • To study nanorod coalescence and compare it with theoretical models.

Main Methods:

  • Sequential reactant injection for nanorod synthesis.
  • Nanobeam energy dispersive X-ray spectroscopy (EDS) for composition profiling.
  • Time-dependent measurements of interdiffusion and coalescence.

Main Results:

  • Successful synthesis of CdTe/CdSe/CdTe heterojunction nanorods.
  • Quantified Se-Te interdiffusion rates at different aging times.
  • Observed nanorod coalescence leading to decreased aspect ratios.
  • Viscous flow model showed good agreement with experimental coalescence rates.

Conclusions:

  • Sequential injection is effective for creating linear heterojunction nanorods.
  • Se-Te interdiffusion drives nanorod coalescence.
  • Continuum viscous flow models can predict nanorod coalescence behavior.