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Related Experiment Video

Updated: Jul 3, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Tunable graphene single electron transistor.

C Stampfer¹, E Schurtenberger, F Molitor

¹Solid State Physics Laboratory, ETH Zurich, Zurich, Switzerland. stampfer@phys.ethz.ch

|July 23, 2008

Summary

This summary is machine-generated.

We studied a graphene single electron transistor, finding localized states in its barriers. This research quantifies energy scales crucial for understanding electron transport in such devices.

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Area of Science:

Condensed Matter Physics
Materials Science

Background:

Graphene single electron transistors (SETs) are promising for quantum electronics.
Understanding electron transport through graphene constrictions and localized states is key to SET performance.

Purpose of the Study:

To investigate electronic transport properties of a graphene SET.
To characterize the influence of localized states on tunneling coupling.
To determine energy scales associated with Coulomb blockade and constriction resonances.

Main Methods:

Fabrication of a graphene SET with an island, source/drain electrodes, and graphene constrictions.
Electrostatic tuning using multiple lateral and a back gate.
Electronic transport measurements, including Coulomb diamond analysis.

Main Results:

Observed nonmonotonic tunneling coupling, indicating localized states in the graphene barriers.
Extracted a charging energy of approximately 3.4 meV from Coulomb diamond measurements.
Estimated a characteristic energy scale for constriction resonances around 10 meV.

Conclusions:

Localized states significantly impact tunneling coupling in graphene SETs.
The quantified energy scales provide critical parameters for designing and optimizing graphene-based quantum devices.