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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Characteristics of MOSFET01:17

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MOSFET: Enhancement Mode01:22

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Electronic spin drift in graphene field-effect transistors.

C Józsa1, M Popinciuc, N Tombros

  • 1Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, The Netherlands.

Physical Review Letters
|July 23, 2008
PubMed
Summary
This summary is machine-generated.

We observed electric field-induced spin drift in graphene spin valves at room temperature. The spin valve signal changed by up to 50% with applied electric fields, showing potential for spintronic device control.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Spin transport in materials is crucial for spintronics.
  • Graphene is a promising material for spintronic devices due to its unique electronic properties.
  • Understanding spin dynamics under electric fields is key for device applications.

Purpose of the Study:

  • To investigate the effect of DC electric fields on electron spin drift.
  • To quantify the changes in spin valve signals due to electric field-induced spin drift.
  • To explore the dependence of this effect on carrier type and electric field direction.

Main Methods:

  • Utilized single-layer graphene spin valves in a field-effect transport geometry.
  • Applied DC electric fields between spin injector and detector at room temperature.
  • Measured spin valve signals in the metallic conduction regime and near the Dirac point.

Main Results:

  • Observed significant modulation (+/- 50%) of spin valve signals by DC electric fields.
  • Demonstrated sign reversal of the spin drift effect when switching between hole and electron conduction.
  • Found strong suppression of the drift effect near the Dirac neutrality point.

Conclusions:

  • The study confirms electric field-induced spin drift in graphene.
  • Experimental results align quantitatively with a drift-diffusion model of spin transport.
  • The findings suggest tunable spin transport in graphene, relevant for spintronic applications.