Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Assessment of low polarization sensitive InP photonic integrated multicast and select switch with commercial 400G-ZR transceivers.

Optics express·2026
Same author

Mechanistic origins of temperature scaling in the early embryonic cell cycle.

Nature communications·2025
Same author

The nuclear-cytoplasmic ratio controls the cell-cycle period in compartmentalized frog egg extract.

Current biology : CB·2025
Same author

Design and investigation of low polarization strained-barrier quantum well SOA co-integrated with passive waveguides.

Optics express·2025
Same author

Experimental assessments of a coherent DSCM and SOA-based WDM metro-access network architecture with enhanced flexibility and capacity.

Optics letters·2025
Same author

A photodetector for red and green with balanced negative and positive photocurrent for imaging is realized.

Scientific reports·2025
Same journal

Denoising algorithm of Φ-OTDR systems based on adaptive fractional wavelet transform denoising.

Optics express·2026
Same journal

Millisecond photon-to-photon latency and high-speed volumetric projection system for optogenetics.

Optics express·2026
Same journal

Polarization-encoded coaxial structured light for high-precision 3D surface profilometry.

Optics express·2026
Same journal

Discrete freeform optical design based on collaborative optimization of point cloud and local normals.

Optics express·2026
Same journal

Ultrafast ghost imaging with 25 GHz speckle switching and wavelength-division multiplexing.

Optics express·2026
Same journal

Atomic vapor cells fabricated by femtosecond laser welding of standard-optical-quality glass.

Optics express·2026
See all related articles

Related Experiment Video

Updated: Jul 3, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Optical injection in semiconductor ring lasers: backfire dynamics.

Lendert Gelens1, Stefano Beri, Guy Van der Sande

  • 1Department of Applied Physics and Photonics, Vrije Universiteit Brussel,Brussels, Belgium. lendert.gelens@vub.ac.be

Optics Express
|July 24, 2008
PubMed
Summary
This summary is machine-generated.

Directional mode switching in semiconductor ring lasers is achieved via optical injection. This novel phenomenon is explained by a two-dimensional asymptotic phase space structure, confirmed by numerical and experimental validation.

More Related Videos

Direct Imaging of Laser-driven Ultrafast Molecular Rotation
10:52

Direct Imaging of Laser-driven Ultrafast Molecular Rotation

Published on: February 4, 2017

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
08:21

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

Published on: March 20, 2015

Related Experiment Videos

Last Updated: Jul 3, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Direct Imaging of Laser-driven Ultrafast Molecular Rotation
10:52

Direct Imaging of Laser-driven Ultrafast Molecular Rotation

Published on: February 4, 2017

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
08:21

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

Published on: March 20, 2015

Area of Science:

  • Optics and Photonics
  • Semiconductor Physics

Background:

  • Semiconductor ring lasers (SRLs) are fundamental components in integrated photonics.
  • Understanding and controlling mode dynamics in SRLs is crucial for advanced optical applications.

Purpose of the Study:

  • To investigate and explain the mechanism of directional mode switching in SRLs.
  • To introduce a novel method for controlling laser output directionality.

Main Methods:

  • Theoretical analysis utilizing a two-dimensional asymptotic phase space model.
  • Numerical simulations to verify theoretical predictions.
  • Experimental validation of the proposed mode switching mechanism.

Main Results:

  • Demonstrated directional mode switching in SRLs through co-propagating optical injection.
  • Identified the critical role of the asymptotic phase space structure in enabling this switching.
  • Experimental results confirmed the theoretical and numerical findings.

Conclusions:

  • Optical injection provides an effective method for controlling directional mode switching in SRLs.
  • The two-dimensional asymptotic phase space framework offers new insights into SRL dynamics.
  • This work paves the way for novel applications in tunable laser sources and optical signal processing.