Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Cascaded Op Amps01:16

Cascaded Op Amps

Operational amplifiers (op-amps) are versatile electronic components that can be interconnected in a cascade - one after another in a linear sequence. This cascading is possible due to their infinite input resistance and zero output resistance, allowing them to maintain their input-output relationships even when connected in series.
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
Inverting and Non-inverting OpAmps01:20

Inverting and Non-inverting OpAmps

In an inverting amplifier, the input voltage is connected through a resistor to the inverting terminal. Meanwhile, the non-inverting terminal is grounded and a feedback resistor is established between the inverting and output terminal, as depicted in Figure 1.

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Uterine arteriovenous malformation - Possible association to uterine fibroids?

The Medical journal of Malaysia·2021
Same author

Characteristics and prognostic significance of circRNA-100876 in patients with colorectal cancer.

European review for medical and pharmacological sciences·2020
Same author

Long non-coding RNA BCAR4 accelerates cell proliferation and suppresses cell apoptosis in gastric cancer via regulating MAPK/ERK signaling.

European review for medical and pharmacological sciences·2020
Same author

Salivary Glands: Potential Reservoirs for COVID-19 Asymptomatic Infection.

Journal of dental research·2020
Same author

LncRNA MIR4435-2HG contributes into colorectal cancer development and predicts poor prognosis.

European review for medical and pharmacological sciences·2020
Same author

Primary pulmonary paraganglioma.

QJM : monthly journal of the Association of Physicians·2018
Same journal

Denoising algorithm of Φ-OTDR systems based on adaptive fractional wavelet transform denoising.

Optics express·2026
Same journal

Millisecond photon-to-photon latency and high-speed volumetric projection system for optogenetics.

Optics express·2026
Same journal

Polarization-encoded coaxial structured light for high-precision 3D surface profilometry.

Optics express·2026
Same journal

Discrete freeform optical design based on collaborative optimization of point cloud and local normals.

Optics express·2026
Same journal

Ultrafast ghost imaging with 25 GHz speckle switching and wavelength-division multiplexing.

Optics express·2026
Same journal

Atomic vapor cells fabricated by femtosecond laser welding of standard-optical-quality glass.

Optics express·2026
See all related articles

Related Experiment Video

Updated: Jul 3, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

CMOS-compatible dual-output silicon modulator for analog signal processing.

S J Spector1, M W Geis, G-R Zhou

  • 1Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420, USA. spector@ll.mit.edu

Optics Express
|July 24, 2008
PubMed
Summary
This summary is machine-generated.

This study presents a simpler silicon optical modulator using a Mach-Zehnder interferometer. The device achieves a 26 GHz electrical bandwidth without complex fabrication steps.

More Related Videos

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

Related Experiment Videos

Last Updated: Jul 3, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

Area of Science:

  • Photonics and optical engineering
  • Materials science for semiconductor devices

Background:

  • Silicon photonics is crucial for high-speed optical communication.
  • Mach-Zehnder interferometers are key components in optical modulation.
  • Fabrication complexity can limit the scalability of silicon optical modulators.

Purpose of the Study:

  • To demonstrate a novel silicon optical modulator design.
  • To achieve high electrical bandwidth and low V(pi)L.
  • To simplify the fabrication process compared to existing devices.

Main Methods:

  • Design and fabrication of a Mach-Zehnder-interferometer based silicon optical modulator.
  • Characterization of the device's electrical bandwidth.
  • Measurement of the V(pi)L parameter.

Main Results:

  • Demonstrated a broadband silicon optical modulator.
  • Achieved an electrical bandwidth of 26 GHz.
  • Obtained a V(pi)L of 4 V.cm.
  • The design avoids epitaxial overgrowth, simplifying fabrication.

Conclusions:

  • The developed modulator offers competitive performance with a simplified fabrication process.
  • This approach could facilitate the widespread adoption of high-performance silicon optical modulators.
  • Further research can explore scaling this fabrication method for mass production.