Related Experiment Video
Updated: Jul 3, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
High frequency ultrasonic detection of C-crack defects in silicon nitride bearing balls
F Deneuville1, M Duquennoy, Ouaftouh
1Département d'Opto-Acousto-Electronique, UMR CNRS 8520, Institut d'Electronique de Microélectronique et de Nanotechnologie, Université de Valenciennes, Le Mont Houy, Valenciennes, France.
Abstract:
A non-destructive testing method for silicon nitride bearing balls based on ultrasonic resonance spectroscopy is proposed here. Through the theoretical study of their elastic vibrations, it is possible to characterize the balls using a vibration mode that is similar to surface wave propagation. The study of the influence of C-crack defects on the resonances of Rayleigh modes is presented here. These C-cracks are typically formed by impacts between balls during finishing or handling. They are frequently found on the surface of silicon nitride bearing balls and these C-cracks decrease the rolling contact fatigue life considerably. This kind of defect is difficult to detect because the C-shaped surface crack is very small and narrow (500 microm x 5 microm), and its depth does not exceed 50 microm. The proposed methodology can both excite spheroidal vibrations in the ceramic balls and detect such vibrations over a large frequency range. In particular, high frequency vibrations are considered because these are similar to the surface waves propagating in the cortical zone of the ceramic balls and consequently they can be used to detect C-crack defects.

