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Updated: Jul 3, 2026
Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Preferential syntheses of semiconducting vertically aligned single-walled carbon nanotubes for direct use in FETs
Liangti Qu1, Feng Du, Liming Dai
1Department of Chemical and Materials Engineering, School of Engineering, University of Dayton, 300 College Park, Dayton, Ohio 45469, USA.
Abstract:
We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without the need for any postsynthesis purification or separation.
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