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Very thin poly-SiC films for micro/nano devices.

Xiao-An Fu¹, Sangsoo Noh, Li Chen

¹Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106, USA.

Journal of Nanoscience and Nanotechnology

|August 7, 2008

Summary

We developed nitrogen-doped, thin, low-stress polycrystalline silicon carbide (poly-SiC) films for micro/nano devices. Films over 100 nm thick are suitable for device fabrication, showing good properties.

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Area of Science:

Materials Science
Nanotechnology
Semiconductor Engineering

Background:

Polycrystalline silicon carbide (poly-SiC) is a promising material for micro/nano devices due to its excellent mechanical and electrical properties.
Achieving thin, low-stress films with controlled doping is crucial for advanced device applications.
Existing deposition methods often struggle to balance film quality, stress, and doping in thin layers.

Purpose of the Study:

To characterize nitrogen-doped, very thin, low-stress poly-SiC films.
To determine the suitability of these films for micro/nano device fabrication.
To investigate the influence of film thickness on material properties.

Main Methods:

Deposition of poly-SiC films using a horizontal LPCVD furnace with SiH2Cl2 and C2H2 precursors.

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Nitrogen doping using NH3 gas at a fixed temperature (900°C) and pressure (4 Torr).

Characterization using HR-TEM and measurement of residual stress and resistivity as a function of film thickness (100 nm to 1 µm).

Main Results:

The films exhibit a (111)-oriented polycrystalline 3C-SiC texture with a 1-4 nm amorphous SiC interfacial layer.
Deposition rate shows an initial increase followed by a plateau.
Residual stress and resistivity are thickness-dependent for films between 100 nm and 1 µm.
Films thinner than 100 nm contain voids or pinholes, while thicker films are void-free.

Conclusions:

Nitrogen-doped poly-SiC films thicker than 100 nm are suitable for micro/nano device fabrication.
Film thickness significantly impacts residual stress, resistivity, and structural integrity.
The LPCVD method provides a scalable approach for producing high-quality thin poly-SiC films.