Related Experiment Video
Updated: Jul 2, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
Performance characteristics of high-conductivity channel electron multipliers
1Harvard-Smithsonian, Center for Astrophysics, 60 Garden Street, Cambridge, Massachusetts 02138Ball Brothers Research Corporation, Boulder, Colorado 80306.
Abstract:
A new type of channel electron multiplier (CEM) has been developed which utilizes a high-conductivity glass to provide a very high count -rate capability. A linear response to count rates in excess of 2x10(6) count s(-1) has been demonstrated with no measureable change in the detection efficiency at total accumulated signal levels of greater than 2x10(11) counts. The measured loss of gain at 2x10(11) accumulated counts was less than 20%. The cathode configuration of the CEM is optimized for maximum sensitivity at xuv wavelengths and detection efficiencies greater than 20% have been obtained using opaque MgF(2) cathodes at wavelengths between about 150 and 800 A.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Design Example: Capacitance Multiplier Circuit
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Mass Analyzers: Common Types

