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MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...

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Related Experiment Video

Updated: Jul 2, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
10:17

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

Published on: July 12, 2017

Pulsed acousto-optical modulator driver.

E D Jones1, F R Franklin, R E Palmer

  • 1Sandia Laboratories, Albuquerque, New Mexico 87185.

The Review of Scientific Instruments
|September 1, 1978
PubMed
Summary
This summary is machine-generated.

A novel gated radio frequency (rf) driver enables pulsed operation of acousto-optic modulators for active laser mode-locking. This approach allows for significantly higher rf power, achieving greater modulation indices for enhanced laser performance.

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Area of Science:

  • Optics and Photonics
  • Laser Physics
  • Electrical Engineering

Background:

  • Active mode-locking is crucial for generating ultrashort laser pulses.
  • Acousto-optic modulators (AOMs) are commonly used for active mode-locking.
  • High modulation indices are required for efficient mode-locking.

Purpose of the Study:

  • To describe a gated radio frequency (rf) driver for acousto-optic modulators.
  • To enable pulsed operation of AOMs for laser mode-locking.
  • To achieve higher modulation indices by applying increased rf power.

Main Methods:

  • Development of a gated rf driver circuit.
  • Integration of the driver with an acousto-optic modulator.
  • Operation of the AOM in a pulsed mode.
  • Characterization of the modulation index achieved.

Main Results:

  • The gated rf driver successfully operated the AOM in a pulsed mode.
  • Significantly higher rf power was applied to the AOM compared to continuous-wave operation.
  • High modulation indices were achieved, enabling efficient active mode-locking.

Conclusions:

  • The described gated rf driver is effective for pulsed AOM operation.
  • This method allows for higher rf power delivery, improving modulation indices.
  • The approach offers a viable solution for enhancing active laser mode-locking performance.