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Preparation of micron thick specimens for high pressure study
1Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853.
The Review of Scientific Instruments
|January 1, 1979
Summary
Researchers developed a new method to prepare micron-thick materials for high-pressure electrical resistance studies. This technique enables accurate pressure calculations and analysis of materials like silicon under extreme conditions.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Physics
Background:
- Studying electrical resistance under high pressure is crucial for understanding material properties.
- Existing methods for high-pressure studies are limited by specimen preparation.
- Accurate pressure calculation relies on Hertzian contact mechanics for thin films.
Purpose of the Study:
- To present a novel method for preparing micron-thick material specimens.
- To enable the study of electrical resistance behavior under high pressure.
- To demonstrate the application of this method to semiconductor and ionic materials.
Main Methods:
- Specimen preparation involves creating micron-thick samples of materials.
- High pressure is applied using a diamond indentor against a diamond flat.
- Hertz's theory is used to calculate generated pressures for specimens with thickness <= 1 micron.
Main Results:
- Successfully prepared micron-thick specimens of Si (100), Si (111), and NaCl (100).
- Presented preliminary results of high-pressure electrical resistance study on Si (100).
Conclusions:
- The developed method is effective for preparing thin specimens for high-pressure research.
- This technique facilitates the investigation of material electrical properties under extreme pressures.
- The study opens avenues for exploring diverse materials under high-pressure conditions.
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