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Updated: Jul 2, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
System for continuous monitoring of point defect concentrations during irradiations and anneals
1Argonne National Laboratory, Argonne, Illinois 60439.
Abstract:
An integrated system, cryostat, electronics, and computer used for detailed resistivity measurements during low-temperature irradiations and anneals of metals is described. The thermal response time and rate of heat removal from the specimens are optimized. The system has excellent stability for extended isothermal anneals; measurements of deviations from Mathiessen's rule are discussed to illustrate this feature. Examples are given of the use of the system to determine dense sets of thermal activation energies during anneals through state I. These determinations are made by linear heating at different rates during recombinations of close Frenkel pairs, and by abruptly and repeatedly changing the annealing temperature during the recovery of more widely separated pairs.
