The addition reaction between silylene and ethyne: further isotope studies, pressure dependence studies, and quantum...

Time-resolved kinetic studies of the reaction of dideutero-silylene, SiD 2, generated by laser flash photolysis of phenylsilane-d 3, have been carried out to obtain rate constants for its bimolecular reaction with C 2H 2. The reaction was studied in the gas phase over the pressure range 1-100 Torr in SF 6 bath gas, at five temperatures in the range 297-600 K. The second-order rate constants obtained by extrapolation to the high-pressure limits at each temperature fitted the Arrhenius equation log( k (infinity)/cm (3) molecule (-1) s (-1)) = (-10.05 +/- 0.05) + (3.43 +/- 0.36 kJ mol (-1))/ RT ln 10. The rate constants were used to obtain a comprehensive set of isotope effects by comparison with earlier obtained rate constants for the reactions of SiH 2 with C 2H 2 and C 2D 2. Additionally, pressure-dependent rate constants for the reaction of SiH 2 with C 2H 2 in the presence of He (1-100 Torr) were obtained at 300, 399, and 613 K. Quantum chemical (ab initio) calculations of the SiC 2H 4 reaction system at the G3 level support the initial formation of silirene, which rapidly isomerizes to ethynylsilane as the major pathway. Reversible formation of vinylsilylene is also an important process. The calculations also indicate the involvement of several other intermediates, not previously suggested in the mechanism. RRKM calculations are in semiquantitative agreement with the pressure dependences and isotope effects suggested by the ab initio calculations, but residual discrepancies suggest the possible involvement of the minor reaction channel, SiH 2 + C 2H 2 --> Si( (3)P 1) + C 2H 4. The results are compared and contrasted with previous studies of this reaction system.