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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
SnO2 quantum dots and quantum wires: controllable synthesis, self-assembled 2D architectures, and gas-sensing
Xiangxing Xu1, Jing Zhuang, Xun Wang
1Department of Chemistry, Tsinghua University, Beijing 100084, PR China.
Abstract:
SnO2 quantum dots (QDs) and ultrathin nanowires (NWs) with diameters of approximately 0.5-2.5 and approximately 1.5-4.5 nm, respectively, were controllably synthesized in a simple solution system. They are supposed to be ideal models for studying the continuous evolution of the quantum-confinement effect in SnO2 1D --> 0D systems. The observed transition from strong to weak quantum confinement in SnO2 QDs and ultrathin NWs is interpreted through the use of the Brus effective-mass approximation and the Nosaka finite-depth well model. Photoluminescence properties that were coinfluenced by size effects, defects (oxygen vacancies), and surface capping are discussed in detail. With the SnO2 QDs as building blocks, various 2D porous structures with ordered hexagonal, distorted hexagonal, and square patterns were prepared on silicon-wafer surfaces and exhibited optical features of 2D photonic crystals and enhanced gas sensitivity.

