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High performance solution-processed indium oxide thin-film transistors.

Hyun Sung Kim¹, Paul D Byrne, Antonio Facchetti

¹Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.

Journal of the American Chemical Society

|September 2, 2008

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High-performance Indium Oxide (In2O3) thin-film transistors (TFTs) were developed using a spin-coating method. These In2O3 TFTs exhibit high electron mobility and low operating voltages, making them suitable for advanced electronic applications.

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Indium Oxide (In2O3) is a promising n-type semiconductor for thin-film transistors (TFTs).
Achieving high electron mobility and low operating voltages in In2O3 TFTs is crucial for high-speed electronic applications.
Controlling film microstructure and orientation is key to optimizing semiconductor device performance.

Purpose of the Study:

To fabricate In2O3 thin-film transistors (TFTs) on various dielectric layers.
To investigate the effect of precursor solution composition on In2O3 film microstructure and device performance.
To achieve high electron mobility and efficient operation in In2O3-based TFTs.

Main Methods:

Fabrication of In2O3 thin-film transistors (TFTs) using spin-coating of precursor solutions.

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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

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Published on: May 24, 2020

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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

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Published on: August 29, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

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Published on: May 24, 2020

Precursor solutions consisted of Indium Chloride (InCl3) and ethanolamine (EAA) in methoxyethanol.

Utilized various dielectrics, including silicon dioxide (SiO2) and self-assembled nanodielectrics (SANDs).

Main Results:

Optimized In2O3 film microstructures with high-mobility In2O3 00 L orientation were achieved within a specific base: In3+ molar ratio range.
Electron mobilities as high as approximately 44 cm2 V(-1) s(-1) were measured for n+-Si/SAND/In2O3/Au devices.
Devices demonstrated high on/off current ratios (Ion/Ioff) of approximately 10(6) and operating voltages below 5 V.

Conclusions:

The spin-coating method with optimized precursor ratios enables the fabrication of high-performance In2O3 TFTs.
The achieved electron mobility and low operating voltage are highly encouraging for high-speed electronic applications.
Self-assembled nanodielectrics (SANDs) provide a suitable platform for high-performance In2O3 TFTs.