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Updated: Jul 2, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions
Amos Sharoni1, Juan Gabriel Ramírez, Ivan K Schuller
1Physics Department, University of California-San Diego, La Jolla, California 92093-0319, USA. asharoni@physics.ucsd.edu
Abstract:
The metal-insulator transition of nanoscaled VO2 devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in magnitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump sizes, demonstrating an inherent property of the VO2 films. We report a surprising relation between jump magnitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.
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