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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Doping graphene with metal contacts.

G Giovannetti¹, P A Khomyakov, G Brocks

¹Instituut-Lorentz for Theoretical Physics, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands.

Physical Review Letters

|September 4, 2008

Summary

This summary is machine-generated.

Graphene doping by metal contacts was studied. Weak bonding on metals like Al, Ag, Cu, Au, and Pt shifts graphene's Fermi level, impacting device performance. A simple model predicts doping based on metal work function.

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Area of Science:

Materials Science
Condensed Matter Physics
Surface Science

Background:

Graphene-based electronic devices require reliable metal contacts.
Understanding metal-substrate interactions is crucial for tuning graphene's electronic properties.

Purpose of the Study:

To investigate graphene doping induced by adsorption on various metal substrates.
To develop a predictive model for Fermi level shifts in graphene.

Main Methods:

Density Functional Theory (DFT) calculations were employed.
Adsorption of graphene on aluminum (Al), silver (Ag), copper (Cu), gold (Au), and platinum (Pt) substrates was simulated.
Fermi level shifts were analyzed in relation to metal work functions.

Main Results:

Weak bonding on specified metal substrates preserves graphene's electronic structure while causing Fermi level shifts up to approximately 0.5 eV.
A transition from p-type to n-type doping in graphene occurs at a metal work function of approximately 5.4 eV.
A simple analytical model accurately describes the numerical results, relating Fermi level shift to metal work function.

Conclusions:

The work function of the metal substrate is a key parameter determining graphene doping.
The developed model provides a versatile tool for predicting and controlling graphene doping for device applications.
This research offers insights into optimizing metal-graphene interfaces for advanced electronic devices.