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Updated: Jul 2, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Near-edge x-ray absorption fine-structure investigation of graphene
D Pacilé1, M Papagno, A Fraile Rodríguez
1Istituto Nazionale di Fisica Nucleare (INFN) and Dipartimento di Fisica Università della Calabria, 87036 Arcavacata di Rende, Cosenza, Italy. dpacile@fis.unical.it
Abstract:
We report the near-edge x-ray absorption fine-structure (NEXAFS) spectrum of a single layer of graphite (graphene) obtained by micromechanical cleavage of highly ordered pyrolytic graphite on a SiO2 substrate. We utilized a photoemission electron microscope to separately study single-, double-, and few-layers graphene samples. In single-layer graphene we observe a splitting of the pi resonance and a clear signature of the predicted interlayer state. The NEXAFS data illustrate the rapid evolution of the electronic structure with the increased number of layers.

