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Related Experiment Video

Updated: Jul 2, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VO_x

Published on: May 13, 2020

Minimum voltage for threshold switching in nanoscale phase-change memory.

Dong Yu¹, Sarah Brittman, Jin Seok Lee

¹Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.

|September 5, 2008

Summary

This summary is machine-generated.

Threshold switching in phase-change memory (PCM) changes from constant field to constant voltage scaling below 10 nm. This enables the miniaturization of PCM bits to the true nanometer scale.

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Last Updated: Jul 2, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Temperature-Controlled Assembly and Characterization of a Droplet Interface Bilayer

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Published on: April 19, 2021

Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Phase-change memory (PCM) relies on the amorphous-to-crystalline transition for data storage.
Understanding the size scaling of the threshold voltage is crucial for device miniaturization.
Previous studies have not fully elucidated the scaling laws at the nanometer scale.

Purpose of the Study:

To investigate the size scaling of the threshold voltage in individual GeTe and Sb2Te3 nanowires for PCM applications.
To determine the critical size at which the scaling law for threshold switching changes.
To establish the feasibility of true nanometer-scale PCM bit fabrication.

Main Methods:

Fabrication of planar devices with individual GeTe and Sb2Te3 nanowires.
Electrical characterization to measure threshold voltage and switching behavior.
Analysis of scaling laws based on amorphous domain length.

Main Results:

Observed a change in the scaling law from constant field to constant voltage as amorphous domain length decreased below 10 nm.
Identified carrier multiplication via inelastic scattering as the underlying mechanism for this crossover.
Demonstrated that the threshold switching behavior is size-dependent at the nanoscale.

Conclusions:

The size scaling of threshold voltage in PCM is governed by different laws at the nanoscale.
The observed crossover indicates that PCM bits can be reliably scaled down to the true nanometer regime.
This research paves the way for next-generation, ultra-dense phase-change memory devices.