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Full recess integration of small diameter low threshold VCSELs within Si-CMOS ICs
James M Perkins1, Travis L Simpkins, Cardinal Warde
1Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Optics Express
|September 6, 2008
Summary
Researchers integrated oxide-aperture vertical-cavity surface-emitting lasers (VCSELs) into silicon integrated circuits. This wafer-scale compatible process maintained VCSEL performance after integration.
Area of Science:
- Optoelectronics
- Materials Science
- Electrical Engineering
Background:
- Vertical-cavity surface-emitting lasers (VCSELs) are crucial optoelectronic components.
- Integrating VCSELs with silicon integrated circuits (ICs) enables advanced functionalities.
- Previous integration methods faced challenges in scalability and performance preservation.
Purpose of the Study:
- To demonstrate the monolithic integration of oxide-aperture VCSELs into commercial silicon ICs.
- To evaluate the electrical and thermal performance of integrated VCSELs.
- To establish a wafer-scale compatible fabrication process for hybrid optoelectronic circuits.
Main Methods:
- Oxide-aperture VCSELs were fabricated as individual device pills.
- Device pills were integrated into etched recesses within dielectric stacks of silicon ICs.
- Wafer-scale compatible processes including planarization, via formation, and interconnect metallization were employed.
- Electrical and thermal characteristics were measured before and after integration.
Main Results:
- Successful integration of 55 µm diameter, 8 µm tall VCSEL device pills into silicon ICs.
- Continuous-wave (CW) threshold currents remained consistent (1-2.5 mA) post-integration.
- Integrated VCSELs exhibited thermal impedances comparable to those on native GaAs substrates.
Conclusions:
- Monolithic integration of VCSELs into silicon ICs is feasible using wafer-scale compatible technology.
- The integration process preserves the essential electrical and thermal performance of VCSEL devices.
- This approach paves the way for advanced, heterogeneous silicon-optoelectronic integrated circuits.
