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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires

Chin-Hua Hsieh1, Mu-Tung Chang, Yu-Jen Chien

  • 1Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Section 2 Kuang-Fu Road, Hsinchu, Taiwan 300, Republic of China.

Nano Letters
|September 10, 2008
PubMed

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