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Doppler Optical Coherence Tomography of Retinal Circulation

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Published on: September 18, 2012

Fast approximation of transfer cross coefficient for optical proximity correction.

Romuald Sabatier¹, Caroline Fossati, Salah Bourennane

¹Institut Fresnel, Ecole Centrale Marseille, CNRS UMR 6133, Marseille Cedex 20, France.

|September 17, 2008

Summary

Model Based Optical Proximity Correction (MBOPC) uses computationally intensive Singular Value Decomposition. This study introduces a faster fixed-point algorithm to estimate eigenvectors, reducing runtime for aerial image computation in photolithography.

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Area of Science:

Semiconductor manufacturing
Computational lithography
Image processing

Background:

Model Based Optical Proximity Correction (MBOPC) is crucial for achieving sub-wavelength resolutions in photolithography.
Current MBOPC methods rely on computationally expensive Singular Value Decomposition (SVD) for Transfer Cross Coefficient (TCC) analysis.
Shrinking pattern dimensions necessitate efficient computational techniques.

Purpose of the Study:

To develop a faster algorithm for Model Based Optical Proximity Correction.
To reduce the computational runtime of aerial image calculations in MBOPC.
To maintain accuracy and minimize information loss during eigenvector estimation.

Main Methods:

Extension of a fast fixed-point algorithm.
Estimation of a fixed number of leading eigenvectors for TCC decomposition.
Application to aerial image computation in MBOPC.

Main Results:

The proposed fixed-point algorithm offers a significant speed-up compared to traditional SVD methods.
Accurate approximation of aerial images with minimal information loss is achieved.
The method effectively handles the decomposition of TCC into eigenvectors.

Conclusions:

The developed fast fixed-point algorithm provides an efficient alternative for MBOPC.
This advancement can accelerate the design and manufacturing of advanced semiconductor devices.
The technique ensures high-fidelity aerial image computation essential for sub-wavelength lithography.