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Updated: Jun 30, 2026

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
Published on: December 3, 2013
Electromagnetically induced transparency on GaAs quantum well to observe hole spin dephasing
Hoonsoo Kang1, Jong Su Kim, Sung In Hwang
1Quantum Optics Laboratory, Advanced Photonics Research Institute, GIST, Gwangju 500-712, Korea. hunskang@gist.ac.kr
Abstract:
Electromagnetically induced transparency (EIT) was observed with transient optical response of exciton correlation in GaAs/AlGaAs quantum well structure. Decoherence of EIT was increased with temperature (12-60 K), which could be simulated by increasing non-radiation decay rate between coherently coupled ground states in Bloch equation for Lambda type three level. The non-radiation decay was mainly due to hole spin dephasing in the system for EIT via coulomb correlation. The hole spin dephasing rate was found with increasing lattice temperature and well accorded to the past results of time resolving method with n-doping material.
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