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Fabrication and Testing of Photonic Thermometers
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Wide temperature range operation of micrometer-scale silicon electro-optic modulators.

Sasikanth Manipatruni1, Rajeev K Dokania, Bradley Schmidt

  • 1School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.

Optics Letters
|October 3, 2008
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Summary

We achieved high-speed electro-optic modulation using a silicon device that operates reliably across a 15 K temperature range. Adjusting bias current compensates for temperature fluctuations, enabling robust photonic integration.

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Area of Science:

  • Photonics
  • Materials Science
  • Electrical Engineering

Background:

  • Silicon photonics is crucial for advanced computing and communication.
  • Electro-optic modulators are key components in photonic integrated circuits.
  • Thermal variations can degrade modulator performance and limit applications.

Purpose of the Study:

  • To demonstrate high bit rate electro-optic modulation in a silicon modulator.
  • To assess the modulator's performance over a wide ambient temperature range.
  • To investigate methods for maintaining low bit error rates despite thermal variations.

Main Methods:

  • Fabrication of a resonant micrometer-scale silicon modulator.
  • Testing modulation performance across a 15 K temperature range.
  • Implementing bias current adjustment to counteract thermal effects.

Main Results:

  • High bit rate electro-optic modulation was successfully demonstrated.
  • Low bit error rates were maintained by thermally counteracting ambient temperature changes.
  • The device exhibited robustness against thermal variations.

Conclusions:

  • The silicon modulator shows significant potential for dense on-chip electronic-photonic integration.
  • Thermal compensation techniques enhance device reliability for practical applications.
  • This work paves the way for more stable and versatile photonic systems.