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Published on: November 15, 2013
Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy
Wojciech Zaleszczyk1, Elzbieta Janik, Adam Presz
1Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland. wzal@ifpan.edu.pl
Nano Letters
|October 10, 2008
Abstract:
It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn(1-x)MnxTe NWs with manganese content up to x=0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn(2+) ions in the cation substitutional sites of the ZnTe matrix of the NWs.
