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Related Experiment Video

Updated: Jun 29, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

Temperature-dependent transport in suspended graphene.

K I Bolotin¹, K J Sikes, J Hone

¹Department of Physics, Columbia University, New York, New York 10027, USA.

Physical Review Letters

|October 15, 2008

Summary

Ultraclean suspended graphene exhibits temperature-dependent resistivity, with near-ballistic transport and high mobility observed at low temperatures. This behavior suggests scattering from acoustic phonons at higher temperatures.

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Graphene's unique electronic properties are of great interest for next-generation electronics.
Understanding charge transport mechanisms in graphene is crucial for device applications.

Purpose of the Study:

To investigate the temperature dependence of resistivity in ultraclean suspended graphene.
To characterize charge transport properties, including mobility and scattering mechanisms.

Main Methods:

Electrical transport measurements were performed on suspended graphene devices.
Resistivity and carrier density were measured as a function of temperature (5-240 K).

Main Results:

Resistivity showed strong temperature dependence between 5 K and 240 K.
Near-ballistic transport and high mobility (~170,000 cm²/V·s) were observed at 5 K.
Resistivity increased linearly with temperature above 50 K for large carrier densities, indicating acoustic phonon scattering.
Mobility remained high (~120,000 cm²/V·s) at 240 K.
Nonuniversal conductivity at the charge neutral point suggests density inhomogeneity.

Conclusions:

Ultraclean suspended graphene exhibits excellent electronic transport properties.
Acoustic phonon scattering is a dominant mechanism at higher temperatures.
Graphene's high mobility surpasses that of conventional semiconductors.