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Improved efficiency Si-photonic attenuator.
D W Zheng1, B T Smith, M Asghari
1Kotura, inc, 2630 corporate place, Monterey Park, CA 91754, USA. dzheng@kotura.com
Optics Express
|October 15, 2008
Summary
This study introduces an improved silicon (Si) attenuator using a recessed contact design for better power handling. The new device model enhances understanding of Si attenuator physics.
Area of Science:
- Optoelectronics
- Semiconductor Devices
- Photonics
Background:
- Silicon (Si) p-i-n diodes integrated with ridge waveguides are fundamental building blocks for optical attenuators.
- Existing designs face limitations in power handling capabilities due to carrier recombination.
- A deeper understanding of the underlying device physics is needed to optimize performance.
Purpose of the Study:
- To develop an improved Si attenuator with enhanced power handling capabilities.
- To investigate the impact of device geometry on attenuator performance.
- To establish a more accurate device model for Si attenuators.
Main Methods:
- Integration of a forward-biased p-i-n diode with a ridge waveguide.
- Implementation of a recessed contact configuration to minimize Si volume for carrier recombination.
- Development of a device model utilizing realistic surface recombination velocities.
Main Results:
- Achieved disruptive power improvement in the Si attenuator.
- Demonstrated the effectiveness of the recessed contact configuration in limiting carrier recombination.
- Validated the device model by accurately representing the attenuator's behavior.
Conclusions:
- The recessed contact configuration significantly enhances the power handling of Si attenuators.
- The developed device model provides a more accurate physical understanding of Si attenuator operation.
- This work offers a pathway for designing more robust and efficient silicon photonic devices.
