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Updated: Jun 29, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

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Improved efficiency Si-photonic attenuator.

D W Zheng1, B T Smith, M Asghari

  • 1Kotura, inc, 2630 corporate place, Monterey Park, CA 91754, USA. dzheng@kotura.com

Optics Express
|October 15, 2008
PubMed
Summary
This summary is machine-generated.

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This study introduces an improved silicon (Si) attenuator using a recessed contact design for better power handling. The new device model enhances understanding of Si attenuator physics.

Area of Science:

  • Optoelectronics
  • Semiconductor Devices
  • Photonics

Background:

  • Silicon (Si) p-i-n diodes integrated with ridge waveguides are fundamental building blocks for optical attenuators.
  • Existing designs face limitations in power handling capabilities due to carrier recombination.
  • A deeper understanding of the underlying device physics is needed to optimize performance.

Purpose of the Study:

  • To develop an improved Si attenuator with enhanced power handling capabilities.
  • To investigate the impact of device geometry on attenuator performance.
  • To establish a more accurate device model for Si attenuators.

Main Methods:

  • Integration of a forward-biased p-i-n diode with a ridge waveguide.
  • Implementation of a recessed contact configuration to minimize Si volume for carrier recombination.

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Last Updated: Jun 29, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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  • Development of a device model utilizing realistic surface recombination velocities.

    • Main Results:

    • Achieved disruptive power improvement in the Si attenuator.
    • Demonstrated the effectiveness of the recessed contact configuration in limiting carrier recombination.
    • Validated the device model by accurately representing the attenuator's behavior.

    Conclusions:

    • The recessed contact configuration significantly enhances the power handling of Si attenuators.
    • The developed device model provides a more accurate physical understanding of Si attenuator operation.
    • This work offers a pathway for designing more robust and efficient silicon photonic devices.