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Updated: Jun 28, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Giant fluctuations and gate control of the g-factor in InAs nanowire quantum dots
S Csonka1, L Hofstetter, F Freitag
1Department of Physics, University of Basel, Klingelbergstr. 82, CH-4056 Basel, Switzerland. szabolcs.csonka@unibas.ch
Abstract:
We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2 Kondo effect. Unlike to previous studies based on 2DEG quantum dots, the g-factors of neighboring electron states show a surprisingly large fluctuation: g can scatter between 2 and 18. Furthermore electric gate tunability of the g-factor is demonstrated.
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